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The GaN Revolution is all about attaining higher efficiency, higher power density, lower system cost and new system design opportunities. Transphorm’s high-voltage GaN FETs, for instance, are claimed to move power electronics beyond Silicon’s limitations. Gallium nitride power transistors are proving to be their disruptive technology of choice. Transphorm’s GaN FET, for instance, is claimed to switch up to 4x faster than silicon solutions. Further, unlike Si MOSFETs, the GaN transistors are inherently bi-directional and optimised in a bridgeless totem-pole power factor correction design. The company’s third-generation platform is a good demonstration of how Gen III 650 V FETs offer the highest threshold voltage claims of (4 V) and gate robustness of (+- 20 V). Transphorm’s GaN is backed by an extensive lifetime, quality and reliability data.