Scientists in Singapore break new ground on digital memory
SINGAPORE: A research team led by scientists from the National University of Singapore (NUS) have pioneered the development of a novel thin, organic film that supports a million more times read-write cycles and consumes 1,000 times less power than commercial flash memories.
The novel organic film can store and process data for one trillion cycles, with the potential to be made even smaller than its current size of 60 square nanometres.
“The novel properties of our invention opens up a new field in the design and development of flexible and lightweight devices. Our work shifts the paradigm on how the industry has traditionally viewed organic electronics, and expands the application of such technologies into new territories ,” said Professor TV en ky Venkatesan, Director of NUS Nanoscience and Nanotechnology Institute (NUSNNI), who coordinated the project.
For years, the computer industry has sought to develop memory technologies with higher endurance, lower cost, and better energy efficiency than commercial flash memories. Researcher Sreetosh Goswami fabricated a novel organic resistive memory device that outperforms commercial flash memory in endurance, energy efficiency and cost. He developed 600 working devices.
Explained Goswami, “For the first time an organic device is looking industrially competitive. Also, we have developed a clear picture of the molecular mechanism based on our in-situ studies which organic devices have always been lacking.” — Newswise